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TYPICAL PERFORMANCE CURVES (R)
APT80GP60JDQ3 600V
APT80GP60JDQ3
POWER MOS 7 IGBT
(R)
E G C
E
The POWER MOS 7(R) IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. * Low Conduction Loss * Low Gate Charge * Ultrafast Tail Current shutoff * 100 kHz operation @ 400V, 39A * 50 kHz operation @ 400V, 59A * SSOA Rated
S
OT
22
7
ISOTOP (R)
"UL Recognized"
file # E145592
C G E
MAXIMUM RATINGS
Symbol VCES VGE I C1 I C2 I CM SSOA PD TJ,TSTG TL Parameter Collector-Emitter Voltage Gate-Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 110C Pulsed Collector Current
1
All Ratings: TC = 25C unless otherwise specified.
APT80GP60JDQ3 UNIT Volts
600 30 151 68 330 330A @ 600V 462 -55 to 150 300
Amps
@ TC = 150C
Switching Safe Operating Area @ TJ = 150C Total Power Dissipation Operating and Storage Junction Temperature Range Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Watts C
STATIC ELECTRICAL CHARACTERISTICS
Symbol V(BR)CES VGE(TH) VCE(ON) Characteristic / Test Conditions Collector-Emitter Breakdown Voltage (VGE = 0V, I C = 1250A) Gate Threshold Voltage (VCE = VGE, I C = 2.5mA, Tj = 25C) MIN TYP MAX Units
600 3.0 4.5 2.2 2.1 1250
A nA
6-2005 050-7442 Rev A
6.0 2.7
Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 25C) Collector-Emitter On Voltage (VGE = 15V, I C = 80A, Tj = 125C) Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 25C)
2 2
Volts
I CES I GES
Collector Cut-off Current (VCE = 600V, VGE = 0V, Tj = 125C) Gate-Emitter Leakage Current (VGE = 20V)
5500
100
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
DYNAMIC CHARACTERISTICS
Symbol Cies Coes Cres VGEP Qg Qge Qgc SSOA td(on) td(off) tf Eon1 Eon2 td(on) tr td(off) tf Eon1 Eon2 Eoff Eoff tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate-to-Emitter Plateau Voltage Total Gate Charge
3
APT80GP60JDQ3
Test Conditions Capacitance VGE = 0V, VCE = 25V f = 1 MHz Gate Charge VCE = 300V I C = 80A TJ = 150C, R G = 5, VGE = VGE = 15V MIN TYP MAX UNIT pF V nC
9840 735 40 7.5 280 65 85 330 29 40 115 80 795 1535 1200 29 40 150 85 795 2155 1690 J
ns ns A
Gate-Emitter Charge Gate-Collector ("Miller ") Charge Switching Safe Operating Area Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Delay Time Current Rise Time Turn-off Delay Time Current Fall Time Turn-on Switching Energy Turn-off Switching Energy
44 55 4 5
15V, L = 100H,VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V I C = 80A RG = 5
Turn-on Switching Energy (Diode)
6
TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V I C = 80A RG = 5
J
Turn-on Switching Energy (Diode)
6
TJ = +125C
THERMAL AND MECHANICAL CHARACTERISTICS
Symbol RJC RJC WT VIsolation Characteristic Junction to Case (IGBT) Junction to Case (DIODE) Package Weight RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) 2500 MIN TYP MAX UNIT C/W gm Volts
.27 .60 29.2
1 Repetitive Rating: Pulse width limited by maximum junction temperature. 2 For Combi devices, Ices includes both IGBT and FRED leakages 3 See MIL-STD-750 Method 3471. 4 Eon1 is the clam ped inductive turn-on-energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on loss. (See Figure 24.) 5 Eon2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the IGBT turn-on switching loss. (See Figures 21, 22.) 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. (See Figures 21, 23.)
APT Reserves the right to change, without notice, the specifications and information contained herein.
050-7442
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
120 100 80
120 100 80
APT80GP60JDQ3
IC, COLLECTOR CURRENT (A)
IC, COLLECTOR CURRENT (A)
TJ = 125C
60
TJ = -55C
60
TJ = 25C
40
TJ = 25C
40
TJ = -55C
20 0
TJ = 125C
20 0
500
FIGURE 1, Output Characteristics(TJ = 25C)
250s PULSE TEST<0.5 % DUTY CYCLE
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
16 VGE, GATE-TO-EMITTER VOLTAGE (V) 14 12 10
FIGURE 2, Output Characteristics (TJ = 125C)
I = 80A C T = 25C
J
0 0.5 1.0 1.5 2.0 2.5 3.0 VCE, COLLECTER-TO-EMITTER VOLTAGE (V)
IC, COLLECTOR CURRENT (A)
400
VCE = 120V VCE = 300V
300 TJ = -55C TJ = 25C 100 TJ = 125C 0 0 234 56 78 9 10 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
8 6 4 2 0 0 50
200
VCE = 480V
1
100 150 200 250 GATE CHARGE (nC) FIGURE 4, Gate Charge
300
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
3.5 3.0 2.5 2.0 1.5 1.0 0.5
3.0 2.5 2.0
IC = 160A
IC = 160A IC = 80A IC = 40A
IC = 80A IC = 40A
1.5 1.0 0.5
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to- Emitter Voltage 1.20
0
6
-25 0 25 50 75 100 125 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature 200
0 -50
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
BVCES, COLLECTOR-TO-EMITTER BREAKDOWN VOLTAGE (NORMALIZED)
IC, DC COLLECTOR CURRENT(A)
1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50
180 160 140 120 100 80 60 40 20 -25 0 25 50 75 100 125 150 TC, CASE TEMPERATURE (C) FIGURE 8, DC Collector Current vs Case Temperature 0 -50 6-2005 050-7442 Rev A
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 7, Breakdown Voltage vs. Junction Temperature
40 td(ON), TURN-ON DELAY TIME (ns) 35 30 25 20 15 10 5 0
VCE = 400V TJ = 25C, TJ =125C RG = 5 L = 100 H
180 td (OFF), TURN-OFF DELAY TIME (ns) 160 140 120 100 80 60 40
VCE = 400V 20 R = 5 G L = 100 H VGE =15V,TJ=25C VGE =15V,TJ=125C
APT80GP60JDQ3
VGE = 15V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 60 50 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V
RG = 5, L = 100H, VCE = 400V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 140 120 100 80 60 40 20 10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 4000 EOFF, TURN OFF ENERGY LOSS (J)
= 400V V CE = +15V V GE R = 5
G
0
RG = 5, L = 100H, VCE = 400V
TJ = 125C, VGE = 15V
tf, FALL TIME (ns)
tr, RISE TIME (ns)
TJ = 25C, VGE = 15V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 4000 EON2, TURN ON ENERGY LOSS (J) 3500 3000 2500 2000 1500 1000 500 0
TJ = 25C,VGE =15V
= 400V V CE = +15V V GE R = 5
G
0
TJ = 125C,VGE =15V
3000
TJ = 125C, VGE = 15V
2000
1000
TJ = 25C, VGE = 15V
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000 3000 2000
Eon2,40A Eon2,80A Eoff,80A
= 400V V CE = +15V V GE T = 125C
J
10 30 50 70 90 110 130 ICE, COLLECTOR TO EMITTER CURRENT (A) FIGURE 14, Turn Off Energy Loss vs Collector Current 4000 SWITCHING ENERGY LOSSES (J)
= 400V V CE = +15V V GE R = 5
G
0
Eon2,120A Eoff,120A
Eon2,120A Eoff,120A
3000
2000
Eon2,80A Eoff,80A
6-2005
1000
Eon2,40A Eoff,40A
1000 0
Rev A
Eoff,40A
050-7442
10 15 20 25 30 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs. Gate Resistance
5
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
0
TYPICAL PERFORMANCE CURVES
20,000 10,000 5000 C, CAPACITANCE ( F)
P
IC, COLLECTOR CURRENT (A)
Cies
300 250 200 150 100 50 0
APT80GP60JDQ3
1000 50
Coes
10 5 1 Cres
0 10 20 30 40 50 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) Figure 17, Capacitance vs Collector-To-Emitter Voltage
0 100 200 300 400 500 600 700 VCE, COLLECTOR TO EMITTER VOLTAGE Figure 18,Minimim Switching Safe Operating Area
0.30 0.25 0.20 0.15 0.10 0.05 0 0.9
ZJC, THERMAL IMPEDANCE (C/W)
0.7
0.5
Note:
PDM
0.3 0.1 0.05 10-5 10-4
t1 t2
SINGLE PULSE
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
1.0
190 FMAX, OPERATING FREQUENCY (kHz)
RC MODEL Junction temp (C) 0.0260 0.00119
100 50
F
10 5
T = 125C J T = 75C C D = 50 % V = 400V CE R = 5
G
Power (watts)
0.0584
0.0354
= min (fmax, fmax2) 0.05 fmax1 = td(on) + tr + td(off) + tf
max
fmax2 = Pdiss =
0.185 Case temperature(C)
0.463
Pdiss - Pcond Eon2 + Eoff TJ - TC RJC
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
1 10 20 30 40 50 60 70 80 90 100 110 120 IC, COLLECTOR CURRENT (A) Figure 20, Operating Frequency vs Collector Current
050-7442
Rev A
6-2005
APT80GP60JDQ3
Gate Voltage
APT60DQ60
10%
td(on)
90%
V CC IC V CE
T J = 125 C Collector Current
tr
A D.U.T.
5% Switching Energy
10%
5% Collector Voltage
Figure 21, Inductive Switching Test Circuit
Figure 22, Turn-on Switching Waveforms and Definitions
VTEST *DRIVER SAME TYPE AS D.U.T.
90% Gate Voltage
TJ = 125 C
A V CE 100uH IC V CLAMP B
td(off)
90%
Collector Voltage
tf
10%
Switching Energy
Collector Current 0
A DRIVER* D.U.T.
Figure 23, Turn-off Switching Waveforms and Definitions
Figure 24, EON1 Test Circuit
050-7442
Rev A
6-2005
TYPICAL PERFORMANCE CURVES
APT80GP60JDQ3
ULTRAFAST SOFT RECOVERY ANTI-PARALLEL DIODE
MAXIMUM RATINGS
Symbol IF(AV) IF(RMS) IFSM Symbol VF Characteristic / Test Conditions Maximum Average Forward Current (TC = 99C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) Characteristic / Test Conditions IF = 80A Forward Voltage IF = 160A IF = 80A, TJ = 125C MIN
All Ratings: TC = 25C unless otherwise specified.
APT80GP60JDQ3 UNIT Amps
60 85 600
TYP MAX UNIT Volts
STATIC ELECTRICAL CHARACTERISTICS 1.82 2.21 1.56
MIN TYP MAXUNIT ns nC
DYNAMIC CHARACTERISTICS
Symbol trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Characteristic Test Conditions Reverse Recovery Time I = 1A, di /dt = -100A/s, V = 30V, T = 25C F F R J Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current
0.70 ZJC, THERMAL IMPEDANCE (C/W) 0.60 0.50 0.40 0.30 0.20 0.10 0 0.7 0.5 0.3 0.1 0.05 10-5 10-4
160 70 100 4 140 690 9 80 1540 31 -
IF = 60A, diF/dt = -200A/s VR = 400V, TC = 25C
-
Amps ns nC Amps ns nC Amps
IF = 60A, diF/dt = -200A/s VR = 400V, TC = 125C
IF = 60A, diF/dt = -1000A/s VR = 400V, TC = 125C
-
0.9
SINGLE PULSE
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 25a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
RC MODEL Junction temp (C) 0.159 0.00560
0.255
0.0849
Case temperature (C)
FIGURE 25b, TRANSIENT THERMAL IMPEDANCE MODEL
050-7442
0.186
0.489
Rev A
Power (watts)
6-2005
200 trr, REVERSE RECOVERY TIME (ns) 180 IF, FORWARD CURRENT (A) 160 140 120 100 80 60 40 20 0 0 TJ = 175C TJ = 125C TJ = -55C TJ = 25C
160 140 120 100 80 60 40 20 120A
APT80GP60JDQ3
T = 125C J V = 400V
R
60A 30A
0.5 1.0 1.5 2.0 2.5 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 26. Forward Current vs. Forward Voltage 2500 Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 27. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 60 50 120A 40 30 20 10 0
T = 125C J V = 400V
R
0
2000 60A 1500
120A
1000 30A 500
60A 30A
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 28. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 1.0 0.8 0.6 0.4 0.2 0.0
0
0 200 400 600 800 1000 1200 1400 1600 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 29. Reverse Recovery Current vs. Current Rate of Change 100
Duty cycle = 0.5 T = 175C
J
trr
Qrr
80
IF(AV) (A)
IRRM trr
60
40
Qrr
20
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 30. Dynamic Parameters vs. Junction Temperature
600 CJ, JUNCTION CAPACITANCE (pF) 500 400 300 200 100 0
0
75 100 125 150 175 Case Temperature (C) Figure 31. Maximum Average Forward Current vs. CaseTemperature
0
25
50
Rev A
6-2005
050-7442
10 100 200 VR, REVERSE VOLTAGE (V) Figure 32. Junction Capacitance vs. Reverse Voltage
1
TYPICAL PERFORMANCE CURVES
+18V 0V diF /dt Adjust
Vr
APT60M75L2LL
APT80GP60JDQ3
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 33. Diode Test Circui t
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
0.25 IRRM
5
Figure 34, Diode Reverse Recovery Waveform and Definitions
SOT-227 (ISOTOP(R)) Package Outline
31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) Hex Nut M4 (4 places)
r = 4.0 (.157) (2 places)
4.0 (.157) 4.2 (.165) (2 places)
25.2 (0.992) 0.75 (.030) 12.6 (.496) 25.4 (1.000) 0.85 (.033) 12.8 (.504)
14.9 (.587) 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504)
* Emitter/Anode
Collector/Cathode
* Emitter/Anode terminals are shorted internally. Current handling capability is equal for either Emitter/Anode terminal.
* Emitter/Anode Dimensions in Millimeters and (Inches)
Gate
ISOTOP(R) is a Registered Trademark of SGS Thomson. APT's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7442
Rev A
6-2005
3.3 (.129) 3.6 (.143)
1.95 (.077) 2.14 (.084)

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